 | | |
| PartNumber | PBSS5160T,215 | PBSS5160TVL |
| Description | Bipolar Transistors - BJT TRANS BISS TAPE-7 | Bipolar Transistors - BJT BL Bipolar Discretes |
| Manufacturer | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 |
| Transistor Polarity | PNP | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | - 60 V | - |
| Collector Base Voltage VCBO | 80 V | - |
| Emitter Base Voltage VEBO | - 5 V | - |
| Maximum DC Collector Current | - 2 A | - |
| Gain Bandwidth Product fT | 220 MHz | - |
| Minimum Operating Temperature | - 65 C | - |
| Maximum Operating Temperature | + 150 C | - |
| DC Current Gain hFE Max | 200 at 1 mA, 5 V | - |
| Height | 1 mm | - |
| Length | 3 mm | - |
| Packaging | Reel | Bulk |
| Width | 1.4 mm | - |
| Brand | Nexperia | Nexperia |
| Continuous Collector Current | - 1 A | - |
| DC Collector/Base Gain hfe Min | 200 | - |
| Pd Power Dissipation | 270 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 3000 | 10000 |
| Subcategory | Transistors | Transistors |
| Part # Aliases | PBSS5160T T/R | - |
| Unit Weight | 0.000282 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PBSS5160T,215 | Bipolar Transistors - BJT TRANS BISS TAPE-7 | |
| PBSS5160TVL | Bipolar Transistors - BJT BL Bipolar Discretes | ||
| PBSS5160TVL | PBSS5160T/SOT23/TO-236AB | ||
| PBSS5160T,215 | Bipolar Transistors - BJT TRANS BISS TAPE-7 | ||
| PBSS5160T | TRANSISTOR, PNP, SOT-23, REEL | ||
| PBSS5160T , G691L293T73U | Neu und Original | ||
| PBSS5160T215 | Now Nexperia PBSS5160T - Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB |