PartNumber | PBSS5260PAPSX | PBSS5260PAP,115 | PBSS5260QAZ |
Description | Bipolar Transistors - BJT PBSS5260PAPS/HUSON6/REEL 7" Q1 | Bipolar Transistors - BJT 60V 2A PNP/PNP lo VCEsat transistor | Bipolar Transistors - BJT 60V,1.7A PNP low VCE sat (BISS) transi |
Manufacturer | Nexperia | Nexperia | Nexperia |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Technology | Si | - | - |
Package / Case | DFN-2020D-6 | DFN-2020-6 | DFN-1010D-3 |
Packaging | Reel | Reel | Reel |
Brand | Nexperia | Nexperia | Nexperia |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 3000 | 3000 | 5000 |
Subcategory | Transistors | Transistors | Transistors |
Mounting Style | - | SMD/SMT | - |
Transistor Polarity | - | PNP | - |
Configuration | - | Dual | - |
Collector Emitter Voltage VCEO Max | - | - 60 V | - |
Collector Base Voltage VCBO | - | - 60 V | - |
Emitter Base Voltage VEBO | - | - 7 V | - |
Collector Emitter Saturation Voltage | - | - 100 mV | - |
Maximum DC Collector Current | - | - 3 A | - |
Gain Bandwidth Product fT | - | 100 MHz | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
DC Current Gain hFE Max | - | 250 | - |
Continuous Collector Current | - | - 2 A | - |
DC Collector/Base Gain hfe Min | - | 170 | - |
Pd Power Dissipation | - | 1450 mW | - |
Unit Weight | - | 0.000254 oz | - |