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| PartNumber | PBSS9410PA,115 | PBSS9410PA | PBSS9410PA115 |
| Description | Bipolar Transistors - BJT 100V 2.7A PNP LOW VCESAT TRANSISTOR | TRANSISTOR,PNP,100V,2.7A,SOT1061, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-100V, Transition Frequency ft:115MHz, Power Dissipation Pd:2.1W, DC Collector Current:-2.7A, DC Cur | Now Nexperia PBSS9410PA - Small Signal Bipolar Transistor, 2.7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, HUSON3 |
| Manufacturer | Nexperia | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DFN-2020-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 100 V | - | - |
| Collector Base Voltage VCBO | - 100 V | - | - |
| Emitter Base Voltage VEBO | - 7 V | - | - |
| Maximum DC Collector Current | - 4 A | - | - |
| Gain Bandwidth Product fT | 115 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 295 | - | - |
| Height | 0.61 mm | - | - |
| Length | 2.1 mm | - | - |
| Packaging | Reel | - | - |
| Width | 2.1 mm | - | - |
| Brand | Nexperia | - | - |
| Continuous Collector Current | - 2.7 A | - | - |
| DC Collector/Base Gain hfe Min | 15 | - | - |
| Pd Power Dissipation | 2.1 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PBSS9410PA,115 | Bipolar Transistors - BJT 100V 2.7A PNP LOW VCESAT TRANSISTOR | |
| PBSS9410PA,115 | TRANS PNP 100V 2.7A SOT1061 | ||
| PBSS9410PA | TRANSISTOR,PNP,100V,2.7A,SOT1061, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-100V, Transition Frequency ft:115MHz, Power Dissipation Pd:2.1W, DC Collector Current:-2.7A, DC Cur | ||
| PBSS9410PA115 | Now Nexperia PBSS9410PA - Small Signal Bipolar Transistor, 2.7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, HUSON3 |