 | | |
| PartNumber | PDTA123TM,315 | PDTA123TMB,315 |
| Description | Bipolar Transistors - Pre-Biased Trans Digital BJT PNP 50V 100mA | Bipolar Transistors - Pre-Biased PNP Resistor Equipped Transistor |
| Manufacturer | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y |
| Configuration | Single | - |
| Transistor Polarity | PNP | - |
| Typical Input Resistor | 2.2 kOhms | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | DFN-1006-3 | DFN-1006-3 |
| DC Collector/Base Gain hfe Min | 30 | - |
| Collector Emitter Voltage VCEO Max | - 50 V | - |
| Continuous Collector Current | 100 mA | - |
| Peak DC Collector Current | 100 mA | - |
| Pd Power Dissipation | 250 mW | - |
| Minimum Operating Temperature | - 65 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Packaging | Reel | Reel |
| Collector Base Voltage VCBO | - 50 V | - |
| Emitter Base Voltage VEBO | - 5 V | - |
| Height | 0.47 mm | - |
| Length | 1.02 mm | - |
| Operating Temperature Range | - 65 C to + 150 C | - |
| Width | 0.5 mm | - |
| Brand | Nexperia | Nexperia |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 10000 | 10000 |
| Subcategory | Transistors | Transistors |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PDTA123TM,315 | Bipolar Transistors - Pre-Biased Trans Digital BJT PNP 50V 100mA | |
| PDTA123TMB,315 | Bipolar Transistors - Pre-Biased PNP Resistor Equipped Transistor | ||
| PDTA123TMB,315 | TRANS PREBIAS PNP 250MW 3DFN | ||
| PDTA123TM,315 | Bipolar Transistors - Pre-Biased Trans Digital BJT PNP 50V 100mA | ||
| PDTA123TMB | Neu und Original |