 | | |
| PartNumber | PHB18NQ10T,118 | PHB191NQ06LT,118 |
| Description | MOSFET TRENCH-100 | MOSFET N-CH TRENCH 55V |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 55 V |
| Id Continuous Drain Current | 18 A | 75 A |
| Rds On Drain Source Resistance | 90 mOhms | 3.7 mOhms |
| Vgs Gate Source Voltage | 20 V | 15 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 79 W | 300 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 4.5 mm | 4.5 mm |
| Length | 10.3 mm | 10.3 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.4 mm | 9.4 mm |
| Brand | Nexperia | Nexperia |
| Fall Time | 12 ns | 178 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 36 ns | 232 ns |
| Factory Pack Quantity | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 18 ns | 273 ns |
| Typical Turn On Delay Time | 6 ns | 63 ns |
| Part # Aliases | /T3 PHB18NQ10T | /T3 PHB191NQ06LT |
| Unit Weight | 0.050442 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PHB18NQ10T,118 | MOSFET TRENCH-100 | |
| PHB191NQ06LT,118 | MOSFET N-CH TRENCH 55V | ||
| PHB191NQ06LT,118 | MOSFET N-CH TRENCH 55V | ||
| PHB18NQ10T,118 | MOSFET N-CH 100V 18A D2PAK | ||
NXP Semiconductors |
PHB143NQ04T,118 | MOSFET N-CH 40V 75A D2PAK | |
| PHB145NQ06T,118 | MOSFET N-CH 55V 75A D2PAK | ||
| PHB146NQ06LT,118 | MOSFET N-CH 55V 75A D2PAK | ||
| PHB153NQ08LT,118 | MOSFET N-CH 75V 75A D2PAK | ||
| PHB160NQ08T,118 | MOSFET N-CH 75V 75A D2PAK | ||
| PHB174NQ04LT,118 | MOSFET N-CH 40V 75A D2PAK | ||
| PHB176NQ04T,118 | MOSFET N-CH 40V 75A D2PAK | ||
| PHB193NQ06T,118 | MOSFET N-CH 55V 75A D2PAK | ||
| PHB152NQ03LTA,118 | MOSFET N-CH 25V 75A D2PAK | ||
| PHB145NQ06T | Neu und Original | ||
| PHB146NQ06LT | Neu und Original | ||
| PHB14NQ20T | Neu und Original | ||
| PHB15006 | Neu und Original | ||
| PHB1506 | Neu und Original | ||
| PHB150N03LT | Neu und Original | ||
| PHB151NQ03LTA | Neu und Original | ||
| PHB152NQ03LT | Neu und Original | ||
| PHB152NQ03LTA | Neu und Original | ||
| PHB153NQ08LT | Neu und Original | ||
| PHB15AA120 | Neu und Original | ||
| PHB160N03LT | Neu und Original | ||
| PHB160N03T | Neu und Original | ||
| PHB160NQ08T | Neu und Original | ||
| PHB174NQ04LT | Neu und Original | ||
| PHB176NQ04T | Neu und Original | ||
| PHB18NQ10T | Neu und Original | ||
| PHB18NQ10T118 | Now Nexperia PHB18NQ10T - Power Field-Effect Transistor, 18A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK | ||
| PHB18NQ20T | Neu und Original | ||
| PHB191NQ06LT | Neu und Original | ||
| PHB191NQ06LT118 | Now Nexperia PHB191NQ06LT - Power Field-Effect Transistor, 75A I(D), 55V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK | ||
| PHB193NQ06T | Neu und Original | ||
| PHB1603680KHS | Neu und Original |