PHE13005,1

PHE13005,127 vs PHE13005,13005

 
PartNumberPHE13005,127PHE13005,13005
DescriptionBipolar Transistors - BJT RAIL BIPOLAR
ManufacturerWeEn Semiconductors-
Product CategoryBipolar Transistors - BJT-
RoHSY-
TechnologySi-
Mounting StyleThrough Hole-
Package / CaseTO-220AB-3-
Transistor PolarityNPN-
ConfigurationSingle-
Collector Emitter Voltage VCEO Max400 V-
Collector Base Voltage VCBO700 V-
Emitter Base Voltage VEBO9 V-
Collector Emitter Saturation Voltage0.3 V-
Maximum DC Collector Current4 A-
Maximum Operating Temperature+ 150 C-
DC Current Gain hFE Max40-
Height9.4 mm-
Length10.3 mm-
Width4.7 mm-
BrandWeEn Semiconductors-
DC Collector/Base Gain hfe Min10-
Pd Power Dissipation75 W-
Product TypeBJTs - Bipolar Transistors-
Factory Pack Quantity1000-
SubcategoryTransistors-
Part # Aliases934055423127-
Unit Weight0.211644 oz-
Hersteller Teil # Beschreibung RFQ
WeEn Semiconductors
WeEn Semiconductors
PHE13005,127 Bipolar Transistors - BJT RAIL BIPOLAR
PHE13005,127 Bipolar Transistors - BJT RAIL BIPOLAR
PHE13005,13005 Neu und Original
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