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| PartNumber | PHP18NQ11T,127 | PHP18NQ11T | PHP18NQ11T127 |
| Description | MOSFET TRENCH-100 | MOSFET TRENCH-100 | Now Nexperia PHP18NQ11T - Power Field-Effect Transistor, 18A I(D), 110V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 110 V | - | - |
| Id Continuous Drain Current | 18 A | - | - |
| Rds On Drain Source Resistance | 90 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 79 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 9.4 mm | - | - |
| Length | 10.3 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.7 mm | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 36 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 18 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Part # Aliases | PHP18NQ11T | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PHP18NQ11T,127 | MOSFET TRENCH-100 | |
| PHP18NQ11T,127 | RF Bipolar Transistors MOSFET TRENCH-100 | ||
| PHP18NQ11T | MOSFET TRENCH-100 | ||
| PHP18NQ11T127 | Now Nexperia PHP18NQ11T - Power Field-Effect Transistor, 18A I(D), 110V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P |