PMBT5551

PMBT5551,235 vs PMBT5551,215

 
PartNumberPMBT5551,235PMBT5551,215
DescriptionBipolar Transistors - BJT TRANS SW TAPE-11Bipolar Transistors - BJT NPN HV 300mA 160V
ManufacturerNexperiaNexperia
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYY
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3
Transistor PolarityNPNNPN
ConfigurationSingleSingle
Collector Emitter Voltage VCEO Max160 V160 V
Collector Base Voltage VCBO180 V180 V
Emitter Base Voltage VEBO6 V6 V
Maximum DC Collector Current0.3 A0.3 A
Gain Bandwidth Product fT300 MHz300 MHz
Minimum Operating Temperature- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C
DC Current Gain hFE Max80 at 1 mA, 5 V80 at 1 mA, 5 V
Height1 mm1 mm
Length3 mm3 mm
PackagingReelReel
Width1.4 mm1.4 mm
BrandNexperiaNexperia
DC Collector/Base Gain hfe Min80 at 1 mA, 5 V, 80 at 10 mA, 5 V, 30 at 50 mA, 5 V80 at 1 mA, 5 V, 80 at 10 mA, 5 V, 30 at 50 mA, 5 V
Pd Power Dissipation250 mW250 mW
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
QualificationAEC-Q101AEC-Q101
Factory Pack Quantity100003000
SubcategoryTransistorsTransistors
Part # Aliases/T3 PMBT5551PMBT5551 T/R
Unit Weight0.000282 oz0.000282 oz
Hersteller Teil # Beschreibung RFQ
Nexperia
Nexperia
PMBT5551,235 Bipolar Transistors - BJT TRANS SW TAPE-11
PMBT5551,215 Bipolar Transistors - BJT NPN HV 300mA 160V
PMBT5551,235 Bipolar Transistors - BJT TRANS SW TAPE-11
PMBT5551,215 Bipolar Transistors - BJT NPN HV 300mA 160V
PMBT5551 Bipolar Junction Transistor, NPN Type, SOT-23
PMBT5551+125 Neu und Original
PMBT5551.215 Trans GP BJT NPN 160V 0.3A 3-Pin TO-236AB T/R (Alt: PMBT5551,215)
PMBT5551215 Now Nexperia PMBT5551 - Small Signal Bipolar Transistor, 0.3A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
PMBT5551,215-CUT TAPE Neu und Original
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