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| PartNumber | PMDPB42UN | PMDPB42UN115 | PMDPB42UN,115 |
| Description | Now Nexperia PMDPB42UN - Small Signal Field-Effect Transisto | IGBT Transistors MOSFET 20V, Dual N-Channel Trench MOSFET | |
| Manufacturer | - | - | NXP Semiconductors |
| Product Category | - | - | FETs - Arrays |
| Series | - | - | - |
| Packaging | - | - | Digi-ReelR |
| Package Case | - | - | 6-UDFN Exposed Pad |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 6-HUSON (2x2) |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 510mW |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 185pF @ 10V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 3.9A |
| Rds On Max Id Vgs | - | - | 50 mOhm @ 3.9A, 4.5V |
| Vgs th Max Id | - | - | 1V @ 250μA |
| Gate Charge Qg Vgs | - | - | 3.5nC @ 4.5V |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| PMDPB42UN | Neu und Original | ||
| PMDPB42UN115 | Now Nexperia PMDPB42UN - Small Signal Field-Effect Transisto | ||
NXP Semiconductors |
PMDPB42UN,115 | IGBT Transistors MOSFET 20V, Dual N-Channel Trench MOSFET |