| PartNumber | PSMN0R9-25YLC,115 | PSMN0R9-25YLDX | PSMN0R9-30ULDX |
| Description | MOSFET N-Ch 25V 0.99 mOhms | MOSFET PSMN0R9-25YLD/LFPAK/REEL 7" Q1 | MOSFET N-channel 30 V, 0.87 mO, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | LFPAK56-5 | LFPAK56-5 | LFPAK56E-4 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V | 30 V |
| Id Continuous Drain Current | 100 A | 300 A | 300 A |
| Rds On Drain Source Resistance | 990 uOhms | 720 uOhms | 1.09 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.05 V | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
| Qg Gate Charge | 110 nC | 89.8 nC | 109 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 150 C |
| Pd Power Dissipation | 272 W | 238 W | 227 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel MOSFET | 1 N-Channel | 1 N-Channel |
| Brand | Nexperia | Nexperia | Nexperia |
| Fall Time | 55 ns | 27.9 ns | 42.6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 74 ns | 42 ns | 49.8 ns |
| Factory Pack Quantity | 1500 | 1500 | 1500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 103.5 ns | 39.2 ns | 63 ns |
| Typical Turn On Delay Time | 42.5 ns | 37.9 ns | 38.1 ns |