PSMN015-100P

PSMN015-100P,127 vs PSMN015-100P vs PSMN015-100P.127

 
PartNumberPSMN015-100P,127PSMN015-100PPSMN015-100P.127
DescriptionMOSFET RAIL PWR-MOSMOSFET RAIL PWR-MOSTransistor: N-MOSFET, unipolar, 100V, 75A, 300W, TO220AB
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current75 A--
Rds On Drain Source Resistance15 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height9.4 mm--
Length10.3 mm--
Transistor Type1 N-Channel--
Width4.7 mm--
BrandNexperia--
Fall Time50 ns--
Product TypeMOSFET--
Rise Time65 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time95 ns--
Typical Turn On Delay Time25 ns--
Part # AliasesPSMN015-100P--
Unit Weight0.211644 oz--
Hersteller Teil # Beschreibung RFQ
Nexperia
Nexperia
PSMN015-100P,127 MOSFET RAIL PWR-MOS
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PSMN015-100P MOSFET RAIL PWR-MOS
PSMN015-100P/100B Neu und Original
PSMN015-100P127 Now Nexperia PSMN015-100P - Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P
PSMN015-100P.127 Transistor: N-MOSFET, unipolar, 100V, 75A, 300W, TO220AB
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