 |  | | |
| PartNumber | PSMN015-110P,127 | PSMN015-110P | PSMN015-110P,PSMN015-100 |
| Description | MOSFET RAIL PWR-MOS | MOSFET RAIL PWR-MOS | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 110 V | - | - |
| Id Continuous Drain Current | 75 A | - | - |
| Rds On Drain Source Resistance | 40.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 9.4 mm | - | - |
| Length | 10.3 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.7 mm | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 50 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 65 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 95 ns | - | - |
| Typical Turn On Delay Time | 25 ns | - | - |
| Part # Aliases | PSMN015-110P | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PSMN015-110P,127 | MOSFET RAIL PWR-MOS | |
| PSMN015-110P,127 | RF Bipolar Transistors MOSFET RAIL PWR-MOS | ||
| PSMN015-110P | MOSFET RAIL PWR-MOS | ||
| PSMN015-110P,PSMN015-100 | Neu und Original | ||
| PSMN015-110P127 | Now Nexperia PSMN015-110P - Power Field-Effect Transistor, 75A I(D), 110V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P | ||
| PSMN015-110PS | Neu und Original |