PSMN017-80P

PSMN017-80PS,127 vs PSMN017-80PS vs PSMN017-80PS127

 
PartNumberPSMN017-80PS,127PSMN017-80PSPSMN017-80PS127
DescriptionMOSFET N-CHAN80V 50AMOSFET,N CHANNEL,80V,50A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0137ohm, Rds(on) Test Voltage Vgs:10V, ThNow Nexperia PSMN017-80PS - Power Field-Effect Transistor, 50A I(D), 80V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance17 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation103 W--
ConfigurationSingle--
PackagingTube--
Transistor Type1 N-Channel--
BrandNexperia--
Product TypeMOSFET--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Unit Weight0.211644 oz--
Hersteller Teil # Beschreibung RFQ
Nexperia
Nexperia
PSMN017-80PS,127 MOSFET N-CHAN80V 50A
PSMN017-80PS,127 MOSFET N-CH 80V TO220AB
PSMN017-80PS MOSFET,N CHANNEL,80V,50A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0137ohm, Rds(on) Test Voltage Vgs:10V, Th
PSMN017-80PS127 Now Nexperia PSMN017-80PS - Power Field-Effect Transistor, 50A I(D), 80V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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