PSMN018

PSMN018-80YS,115 vs PSMN018-100ESFQ vs PSMN018-100PSFQ

 
PartNumberPSMN018-80YS,115PSMN018-100ESFQPSMN018-100PSFQ
DescriptionMOSFET N-CHAN 80V 45AMOSFET N-CHANNEL 100V 53A I2PAKMOSFET N-CH 100V 53A TO220AB
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseLFPAK56-5--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current45 A--
Rds On Drain Source Resistance15 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation89 W--
ConfigurationSingle--
PackagingReel--
Transistor Type1 N-Channel--
BrandNexperia--
Product TypeMOSFET--
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Unit Weight0.002871 oz--
Hersteller Teil # Beschreibung RFQ
Nexperia
Nexperia
PSMN018-80YS,115 MOSFET N-CHAN 80V 45A
PSMN018-100ESFQ MOSFET N-CHANNEL 100V 53A I2PAK
PSMN018-100PSFQ MOSFET N-CH 100V 53A TO220AB
PSMN018-80YS,115 MOSFET N-CH 80V 45A LFPAK
PSMN018-80YS Neu und Original
PSMN018-80YS115 Now Nexperia Power Field-Effect Transistor, 45A I(D), 80V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
PSMN018-80YS,115-CUT TAPE Neu und Original
Top