PSMN045-8

PSMN045-80YS,115 vs PSMN045-80YS vs PSMN045-80YS,115-CUT TAPE

 
PartNumberPSMN045-80YS,115PSMN045-80YSPSMN045-80YS,115-CUT TAPE
DescriptionMOSFET N-CHAN 80V 17AMOSFET,N CHANNEL,80V,24A,LFPAK, Transistor Polarity:N Channel, Continuous Drain Current Id:24A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.037ohm, Rds(on) Test Voltage Vgs:10V, Thresh
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseLFPAK56-5--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current24 A--
Rds On Drain Source Resistance45 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge12.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation56 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel--
BrandNexperia--
Fall Time4.4 ns--
Product TypeMOSFET--
Rise Time4.6 ns--
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time9.2 ns--
Unit Weight0.003157 oz--
Hersteller Teil # Beschreibung RFQ
Nexperia
Nexperia
PSMN045-80YS,115 MOSFET N-CHAN 80V 17A
PSMN045-80YS,115 MOSFET N-CH 80V 24A LFPAK
PSMN045-80YS MOSFET,N CHANNEL,80V,24A,LFPAK, Transistor Polarity:N Channel, Continuous Drain Current Id:24A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.037ohm, Rds(on) Test Voltage Vgs:10V, Thresh
PSMN045-80YS,115-CUT TAPE Neu und Original
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