PSMN1R0-40Y

PSMN1R0-40YLDX vs PSMN1R0-40YLD vs PSMN1R0-40YLDX-CUT TAPE

 
PartNumberPSMN1R0-40YLDXPSMN1R0-40YLDPSMN1R0-40YLDX-CUT TAPE
DescriptionMOSFET N-CH 40V 1.1 mOhm logic level MOSFET
ManufacturerNexperiaNXP Semiconductors-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseLFPAK56-5--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current280 A--
Rds On Drain Source Resistance1.1 mOhms--
Vgs th Gate Source Threshold Voltage1.7 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge127 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation198 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Transistor Type1 N-Channel1 N-Channel-
BrandNexperia--
Fall Time38 ns38 ns-
Product TypeMOSFET--
Rise Time62 ns62 ns-
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time65 ns65 ns-
Typical Turn On Delay Time52 ns52 ns-
Unit Weight0.003407 oz--
Package Case-LFPAK-4-
Pd Power Dissipation-198 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-100 A-
Vds Drain Source Breakdown Voltage-40 V-
Vgs th Gate Source Threshold Voltage-1.7 V-
Rds On Drain Source Resistance-1.1 mOhms-
Qg Gate Charge-59 nC-
Hersteller Teil # Beschreibung RFQ
Nexperia
Nexperia
PSMN1R0-40YLDX MOSFET N-CH 40V 1.1 mOhm logic level MOSFET
PSMN1R0-40YSHX MOSFET PSMN1R0-40YSH/SOT1023/4 LEADS
PSMN1R0-40YLDX MOSFET N-CH 40V 100A LFPAK
PSMN1R0-40YLD Neu und Original
PSMN1R0-40YLDX-CUT TAPE Neu und Original
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