PartNumber | PSMN1R1-30PL,127 | PSMN1R1-30PL | PSMN1R1-30PL127 |
Description | MOSFET N-Ch 30V 1.3 mOhms | Now Nexperia PSMN1R1-30PL - Power Field-Effect Transistor, 120A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
Manufacturer | Nexperia | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 120 A | - | - |
Rds On Drain Source Resistance | 1.3 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.3 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 243 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 338 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Transistor Type | 1 N-Channel | - | - |
Brand | Nexperia | - | - |
Fall Time | 115 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 213 ns | - | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 199 ns | - | - |
Typical Turn On Delay Time | 95 ns | - | - |
Unit Weight | 0.211644 oz | - | - |