PSMN2R6-3

PSMN2R6-30YLC,115 vs PSMN2R6-30YLC vs PSMN2R6-30YLC,115-CUT TAPE

 
PartNumberPSMN2R6-30YLC,115PSMN2R6-30YLCPSMN2R6-30YLC,115-CUT TAPE
DescriptionMOSFET N-Ch 30V 2.8mOhms
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseLFPAK56-5--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance2.8 mOhms--
Vgs th Gate Source Threshold Voltage1.54 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge39 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation106 W--
ConfigurationSingle--
PackagingReel--
Transistor Type1 N-Channel--
BrandNexperia--
Product TypeMOSFET--
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Unit Weight0.002854 oz--
Hersteller Teil # Beschreibung RFQ
Nexperia
Nexperia
PSMN2R6-30YLC,115 MOSFET N-Ch 30V 2.8mOhms
PSMN2R6-30YLC,115 MOSFET N-CH 30V 100A LFPAK
PSMN2R6-30YLC Neu und Original
PSMN2R6-30YLC115 Now Nexperia PSMN2R6-30YLC - Power Field-Effect Transistor, 100A I(D), 30V, 0.00365ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
PSMN2R6-30YLC,115-CUT TAPE Neu und Original
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