PSMN2R7

PSMN2R7-30PL,127 vs PSMN2R7-30BL,118

 
PartNumberPSMN2R7-30PL,127PSMN2R7-30BL,118
DescriptionMOSFET N-CHAN 30V 100AMOSFET Std N-chanMOSFET
ManufacturerNexperiaNexperia
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleSMD/SMT
Package / CaseTO-220-3TO-263-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V
Id Continuous Drain Current100 A100 A
Rds On Drain Source Resistance2.7 mOhms3 mOhms
Vgs Gate Source Voltage20 V20 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation170 W170 W
ConfigurationSingleSingle
PackagingTubeReel
Transistor Type1 N-Channel1 N-Channel
BrandNexperiaNexperia
Product TypeMOSFETMOSFET
Factory Pack Quantity50800
SubcategoryMOSFETsMOSFETs
Unit Weight0.211644 oz0.139332 oz
Hersteller Teil # Beschreibung RFQ
Nexperia
Nexperia
PSMN2R7-30PL,127 MOSFET N-CHAN 30V 100A
PSMN2R7-30BL,118 MOSFET Std N-chanMOSFET
PSMN2R7-30BL,118 MOSFET N-CH 30V 100A D2PAK
PSMN2R7-30PL,127 MOSFET N-CH 30V TO220AB
PSMN2R7-30BL118 - Bulk (Alt: PSMN2R7-30BL118)
PSMN2R7-30PL MOSFET,N CHANNEL,30V,100A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0023ohm, Rds(on) Test Voltage Vgs:10V,
PSMN2R7-30PL127 Now Nexperia PSMN2R7-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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