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| PartNumber | PSMN4R1-30YLC,115 | PSMN4R1-30YLC115 | PSMN4R1-60YL |
| Description | MOSFET N-Ch 30V 4.35mOhms | Now Nexperia PSMN4R1-30YLC - Power Field-Effect Transistor, 90A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | LFPAK56-5 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 90 A | - | - |
| Rds On Drain Source Resistance | 4.35 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.58 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 23 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 64 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PSMN4R1-30YLC,115 | MOSFET N-Ch 30V 4.35mOhms | |
| PSMN4R1-30YLC,115 | MOSFET N-CH 30V 90A LFPAK | ||
| PSMN4R1-60YLX | MOSFET N-CH 60V 100A LFPAK56 | ||
| PSMN4R1-30YLC115 | Now Nexperia PSMN4R1-30YLC - Power Field-Effect Transistor, 90A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK | ||
| PSMN4R1-60YL | Neu und Original |