PSMN8R7

PSMN8R7-80BS,118 vs PSMN8R7-100YSFQ vs PSMN8R7-100YSFX

 
PartNumberPSMN8R7-80BS,118PSMN8R7-100YSFQPSMN8R7-100YSFX
DescriptionMOSFET N-CH 80 V 8.7 MOHM MOSFETPSMN8R7-100YSF/SOT669/LFPAK - Rail/Tube (Alt: PSMN8R7-100YSFX)PSMN8R7-100YSF/SOT669/LFPAK
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage73 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance14 mOhms--
Vgs Gate Source Voltage4.6 V--
Pd Power Dissipation170 W--
ConfigurationSingle--
PackagingReel--
Transistor Type1 N-Channel--
BrandNexperia--
Product TypeMOSFET--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
Nexperia
Nexperia
PSMN8R7-80BS,118 MOSFET N-CH 80 V 8.7 MOHM MOSFET
PSMN8R7-80PS,127 MOSFET N-CHAN 80V 64A
PSMN8R7-100YSFQ PSMN8R7-100YSF/SOT669/LFPAK - Rail/Tube (Alt: PSMN8R7-100YSFX)
PSMN8R7-80PS,127 MOSFET N-CH 80V TO220AB
PSMN8R7-80BS,118 RF Bipolar Transistors MOSFET N-CH 80 V 8.7 MOHM MOSFET
PSMN8R7-100YSFX PSMN8R7-100YSF/SOT669/LFPAK
PSMN8R7-80PS MOSFET,N CHANNEL,80V,90A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:90A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0075ohm, Rds(on) Test Voltage Vgs:10V, Th
PSMN8R7-80BS118 Now Nexperia PSMN8R7-80BS - Power Field-Effect Transistor, 90A I(D), 80V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
PSMN8R7-100YSF,115 Neu und Original
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