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| PartNumber | PSMN9R5-100BS,118 | PSMN9R5-100BS | PSMN9R5-100BS118 |
| Description | MOSFET N-CH 100 V 9.6 MOHM MOSFET | MOSFET, N CH, 100V, 89A, D2PAK | Now Nexperia PSMN9R5-100BS - Power Field-Effect Transistor, 89A I(D), 100V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 90 V | - | - |
| Id Continuous Drain Current | 89 A | - | - |
| Rds On Drain Source Resistance | 9.6 mOhms | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Pd Power Dissipation | 211 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PSMN9R5-100BS,118 | MOSFET N-CH 100 V 9.6 MOHM MOSFET | |
| PSMN9R5-100BS,118 | RF Bipolar Transistors MOSFET N-CH 100 V 9.6 MOHM MOSFET | ||
| PSMN9R5-100BS | MOSFET, N CH, 100V, 89A, D2PAK | ||
| PSMN9R5-100BS118 | Now Nexperia PSMN9R5-100BS - Power Field-Effect Transistor, 89A I(D), 100V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |