PTFA26

PTFA260451E V1 vs PTFA260851E V1 vs PTFA260851E V1 R250

 
PartNumberPTFA260451E V1PTFA260851E V1PTFA260851E V1 R250
DescriptionRF MOSFET Transistors RFP-LDMOS GOLDMOS 8FET RF 65V 2.68GHZ H-30248-2FET RF 65V 2.68GHZ H-30248-2
ManufacturerInfineon--
Product CategoryRF MOSFET Transistors--
RoHSY--
Transistor PolarityN-Channel--
TechnologySi--
Vds Drain Source Breakdown Voltage65 V--
Rds On Drain Source Resistance160 mOhms--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 200 C--
Mounting StyleSMD/SMT--
PackagingTray--
ConfigurationSingle--
TypeRF Power MOSFET--
BrandInfineon Technologies--
Channel ModeEnhancement--
Pd Power Dissipation199 W--
Product TypeRF MOSFET Transistors--
Factory Pack Quantity1--
SubcategoryMOSFETs--
Vgs Gate Source Voltage- 0.5 V to 12 V--
Part # AliasesFA260451EV1XP--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
PTFA260451E V1 RF MOSFET Transistors RFP-LDMOS GOLDMOS 8
Infineon Technologies
Infineon Technologies
PTFA260451E V1 IC FET RF LDMOS 45W H-30265-2
PTFA260851E V1 FET RF 65V 2.68GHZ H-30248-2
PTFA260851E V1 R250 FET RF 65V 2.68GHZ H-30248-2
PTFA260851F V1 IC FET RF LDMOS 85W H-31248-2
PTFA260851F V1 R250 IC FET RF LDMOS 85W H-31248-2
PTFA261301E V1 IC FET RF LDMOS 130W H-30260-2
PTFA261301F V1 IC FET RF LDMOS 130W H-31260-2
PTFA261702E V1 IC FET RF LDMOS 170W H-30275-4
PTFA260451E Neu und Original
PTFA26045IE Neu und Original
PTFA261301FV1 Neu und Original
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