PartNumber | PTFA260451E V1 | PTFA260851E V1 | PTFA260851E V1 R250 |
Description | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | FET RF 65V 2.68GHZ H-30248-2 | FET RF 65V 2.68GHZ H-30248-2 |
Manufacturer | Infineon | - | - |
Product Category | RF MOSFET Transistors | - | - |
RoHS | Y | - | - |
Transistor Polarity | N-Channel | - | - |
Technology | Si | - | - |
Vds Drain Source Breakdown Voltage | 65 V | - | - |
Rds On Drain Source Resistance | 160 mOhms | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 200 C | - | - |
Mounting Style | SMD/SMT | - | - |
Packaging | Tray | - | - |
Configuration | Single | - | - |
Type | RF Power MOSFET | - | - |
Brand | Infineon Technologies | - | - |
Channel Mode | Enhancement | - | - |
Pd Power Dissipation | 199 W | - | - |
Product Type | RF MOSFET Transistors | - | - |
Factory Pack Quantity | 1 | - | - |
Subcategory | MOSFETs | - | - |
Vgs Gate Source Voltage | - 0.5 V to 12 V | - | - |
Part # Aliases | FA260451EV1XP | - | - |