PZT2907AT1G

PZT2907AT1G vs PZT2907AT1G(P2F) vs PZT2907AT1G, SOT-223

 
PartNumberPZT2907AT1GPZT2907AT1G(P2F)PZT2907AT1G, SOT-223
DescriptionBipolar Transistors - BJT 600mA 60V PNP
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 60 V--
Collector Base Voltage VCBO- 60 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage- 1.6 V--
Maximum DC Collector Current0.6 A--
Gain Bandwidth Product fT200 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesPZT2907A--
DC Current Gain hFE Max300--
Height1.57 mm--
Length6.5 mm--
PackagingReel--
Width3.5 mm--
BrandON Semiconductor--
Continuous Collector Current- 0.6 A--
Pd Power Dissipation1.5 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz--
Hersteller Teil # Beschreibung RFQ
PZT2907AT1G Bipolar Transistors - BJT 600mA 60V PNP
PZT2907AT1G(P2F) Neu und Original
PZT2907AT1G, SOT-223 Neu und Original
PZT2907AT1G-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
PZT2907AT1G Bipolar Transistors - BJT 600mA 60V PNP
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