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| PartNumber | QH8MA2TCR | QH8MA2 | QH8MA2 TCR |
| Description | MOSFET 30V Nch+Pch Power MOSFET | ||
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSMT-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 4.5 A, 3 A | - | - |
| Rds On Drain Source Resistance | 25 mOhms, 55 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 8.4 nC, 7.8 nC | - | - |
| Minimum Operating Temperature | - | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | ROHM Semiconductor | - | - |
| Forward Transconductance Min | 1.4 S, 1.9 S | - | - |
| Fall Time | 5.7 ns, 8.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns, 16.8 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12 ns, 27.6 ns | - | - |
| Typical Turn On Delay Time | 7.2 ns, 7.9 ns | - | - |
| Part # Aliases | QH8MA2 | - | - |