PartNumber | QS6M4TR | QS6M4 | QS6M4 TR |
Description | MOSFET N+P 30 20V 1.5A TSMT6 | ||
Manufacturer | ROHM Semiconductor | ROHM | - |
Product Category | MOSFET | FETs - Arrays | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-457T-6 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel, P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V, 20 V | - | - |
Id Continuous Drain Current | 1.5 A | - | - |
Rds On Drain Source Resistance | 260 mOhms | - | - |
Vgs Gate Source Voltage | 12 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1.25 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 0.85 mm | - | - |
Length | 2.9 mm | - | - |
Product | MOSFET Small Signal | - | - |
Series | QS6M4 | - | - |
Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
Type | MOSFET | - | - |
Width | 1.6 mm | - | - |
Brand | ROHM Semiconductor | - | - |
Fall Time | 18 ns, 12 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 18 ns, 12 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 15 ns, 45 ns | - | - |
Typical Turn On Delay Time | 7 ns, 10 ns | - | - |
Part # Aliases | QS6M4 | - | - |
Unit Weight | 0.000494 oz | - | - |