QS6M4

QS6M4TR vs QS6M4 vs QS6M4 TR

 
PartNumberQS6M4TRQS6M4QS6M4 TR
DescriptionMOSFET N+P 30 20V 1.5A TSMT6
ManufacturerROHM SemiconductorROHM-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-457T-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage30 V, 20 V--
Id Continuous Drain Current1.5 A--
Rds On Drain Source Resistance260 mOhms--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height0.85 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesQS6M4--
Transistor Type1 N-Channel, 1 P-Channel--
TypeMOSFET--
Width1.6 mm--
BrandROHM Semiconductor--
Fall Time18 ns, 12 ns--
Product TypeMOSFET--
Rise Time18 ns, 12 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns, 45 ns--
Typical Turn On Delay Time7 ns, 10 ns--
Part # AliasesQS6M4--
Unit Weight0.000494 oz--
Hersteller Teil # Beschreibung RFQ
QS6M4TR MOSFET N+P 30 20V 1.5A TSMT6
QS6M4 Neu und Original
QS6M4 TR Neu und Original
QS6M4TR MOSFET N/P-CH 30V/20V 1.5A TSMT6
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