QSB3

QSB363ZR vs QSB373ZR vs QSB363YR

 
PartNumberQSB363ZRQSB373ZRQSB363YR
DescriptionPhototransistors Phototransistor Si InfraredSENSOR PHOTO 2MM 2SMDOptical Sensors Phototransistors Phototransistor Si Infrared
ManufacturerON Semiconductor-Fairchild Semiconductor
Product CategoryPhototransistors-Optical Sensors - Phototransistors
RoHSY--
Package / CaseT-3/4--
Peak Wavelength940 nm--
Operating Supply Voltage5 V--
Collector Emitter Voltage VCEO Max30 V--
Dark Current100 nA-100 nA
Rise Time15 us-15 us
Fall Time15 us-15 us
Pd Power Dissipation75 mW--
Minimum Operating Temperature- 25 C-- 25 C
Maximum Operating Temperature+ 85 C-+ 85 C
SeriesQSB363--
Height3 mm--
Length2.7 mm--
Lens Color/StyleBlack Transparent--
PackagingReel-Digi-ReelR Alternate Packaging
TypePhoto Transistor-Photo Transistor
Width2.2 mm--
BrandON Semiconductor / Fairchild--
Half Intensity Angle Degrees12 deg--
Moisture SensitiveYes--
Product TypePhototransistors--
Factory Pack Quantity1000--
SubcategoryOptical Detectors and Sensors--
Unit Weight0.003175 oz-0.003175 oz
Package Case--T-3/4
Operating Temperature---40°C ~ 85°C (TA)
Mounting Type--Surface Mount
Power Max--75mW
Current Collector Ic Max---
Voltage Collector Emitter Breakdown Max--30V
Orientation--Top View
Wavelength--940nm
Current Dark Id Max--100nA
Viewing Angle--24°
Pd Power Dissipation--75 mW
Collector Emitter Voltage VCEO Max--30 V
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
QSB363ZR Phototransistors Phototransistor Si Infrared
ON Semiconductor
ON Semiconductor
QSB373ZR SENSOR PHOTO 2MM 2SMD
QSB363YR Optical Sensors Phototransistors Phototransistor Si Infrared
QSB363ZR SENSOR PHOTO 940NM TOP VIEW 2SMD
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