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| PartNumber | QST9TR | QST9TR , LMUN5312DW1T1G |
| Description | Bipolar Transistors - BJT BIPOLAR PNP -30/-1A | |
| Manufacturer | ROHM Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | - |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SMT-6 | - |
| Transistor Polarity | PNP | - |
| Configuration | Dual | - |
| Collector Emitter Voltage VCEO Max | - 30 V | - |
| Collector Base Voltage VCBO | - 30 V | - |
| Emitter Base Voltage VEBO | - 6 V | - |
| Collector Emitter Saturation Voltage | - 150 mV | - |
| Maximum DC Collector Current | 1 A | - |
| Gain Bandwidth Product fT | 320 MHz | - |
| Maximum Operating Temperature | + 150 C | - |
| Series | QST9 | - |
| DC Current Gain hFE Max | 680 | - |
| Height | 1.1 mm | - |
| Length | 2.9 mm | - |
| Packaging | Reel | - |
| Width | 1.6 mm | - |
| Brand | ROHM Semiconductor | - |
| Continuous Collector Current | - 1 A | - |
| DC Collector/Base Gain hfe Min | 270 | - |
| Pd Power Dissipation | 1.25 W | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | Transistors | - |
| Part # Aliases | QST9 | - |