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| PartNumber | RCD100N19TL | RCD100N19 | RCD100N19FMMTL |
| Description | MOSFET 4V Drive Nch Power MOSFET | ||
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 190 V | - | - |
| Id Continuous Drain Current | 10 A | - | - |
| Rds On Drain Source Resistance | 130 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 500 mV | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 52 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 85 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Series | RCD100N19 | RCD100N19 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | ROHM Semiconductor | - | - |
| Fall Time | 75 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 140 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | RCD100N19 | - | - |
| Unit Weight | 0.011993 oz | - | - |