 |  | | |
| PartNumber | RFD12N06RLESM9A | RFD12N06RLESM | RFD12N06RLESM9 |
| Description | MOSFET 60V Single | MOSFET FET 50V 100.0 MOHM DPAK | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 17 A | - | - |
| Rds On Drain Source Resistance | 75 mOhms | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 49 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.39 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | RFD12N06RLESM | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 37 ns, 50 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 89 ns, 34 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 22 ns, 41 ns | - | - |
| Typical Turn On Delay Time | 13 ns, 5.3 ns | - | - |
| Part # Aliases | RFD12N06RLESM9A_NL | - | - |
| Unit Weight | 0.009184 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
RFD12N06RLESM9A | MOSFET 60V Single | |
| RFD12N06RLESM9A-CUT TAPE | Neu und Original | ||
| RFD12N06RLESM | MOSFET FET 50V 100.0 MOHM DPAK | ||
| RFD12N06RLESM9 | Neu und Original | ||
| RFD12N06RLESM9A-NL | Neu und Original | ||
ON Semiconductor |
RFD12N06RLESM9A | MOSFET N-CH 60V 18A DPAK |