RGCL8

RGCL80TK60DGC11 vs RGCL80TK60 vs RGCL80TK60D

 
PartNumberRGCL80TK60DGC11RGCL80TK60RGCL80TK60D
DescriptionIGBT Transistors IGBT HIGH VOLT AND CURRENT AP
ManufacturerROHM Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-3PFM--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.4 V--
Maximum Gate Emitter Voltage30 V--
Continuous Collector Current at 25 C35 A--
Pd Power Dissipation57 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
PackagingTube--
BrandROHM Semiconductor--
Gate Emitter Leakage Current200 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity30--
SubcategoryIGBTs--
Part # AliasesRGCL80TK60D--
Hersteller Teil # Beschreibung RFQ
RGCL80TS60GC11 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGCL80TS60DGC11 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGCL80TK60GC11 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGCL80TK60DGC11 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGCL80TK60 Neu und Original
RGCL80TK60D Neu und Original
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