RGTH4

RGTH40TK65GC11 vs RGTH40TK65DGC11 vs RGTH40TS65

 
PartNumberRGTH40TK65GC11RGTH40TK65DGC11RGTH40TS65
DescriptionIGBT Transistors IGBT HIGH VOLT AND CURRENT APIGBT Transistors IGBT HIGH VOLT AND CURRENT AP
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-3PFMTO-3PFM-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max650 V650 V-
Collector Emitter Saturation Voltage1.6 V1.6 V-
Maximum Gate Emitter Voltage30 V30 V-
Continuous Collector Current at 25 C23 A23 A-
Pd Power Dissipation56 W56 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingTubeTube-
BrandROHM SemiconductorROHM Semiconductor-
Gate Emitter Leakage Current200 nA200 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Part # AliasesRGTH40TK65RGTH40TK65D-
Hersteller Teil # Beschreibung RFQ
RGTH40TK65GC11 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGTH40TK65DGC11 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGTH40TS65DGC11 IGBT Transistors 650V 20A IGBT Stop Trench
RGTH40TS65GC11 IGBT Transistors 650V 20A IGBT Stop Trench
RGTH40TS65DGC11 IGBT Transistors 650V 20A Field Stop Trench IGBT
RGTH40TS65GC11 IGBT Transistors 650V 20A Field Stop Trench IGBT
RGTH40TS65 Neu und Original
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