RGTH40TS

RGTH40TS65DGC11 vs RGTH40TS65GC11 vs RGTH40TS65

 
PartNumberRGTH40TS65DGC11RGTH40TS65GC11RGTH40TS65
DescriptionIGBT Transistors 650V 20A IGBT Stop TrenchIGBT Transistors 650V 20A IGBT Stop Trench
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247-3TO-247-3-
Mounting StyleThrough HoleThrough Hole-
Collector Emitter Voltage VCEO Max650 V650 V-
Collector Emitter Saturation Voltage1.6 V1.6 V-
Maximum Gate Emitter Voltage30 V30 V-
Continuous Collector Current at 25 C40 A40 A-
Pd Power Dissipation144 W144 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesRGTH40TS65RGTH40TS65-
PackagingTubeTube-
Continuous Collector Current Ic Max85 A40 A-
Operating Temperature Range- 40 C to + 175 C- 40 C to + 175 C-
BrandROHM SemiconductorROHM Semiconductor-
Continuous Collector Current20 A20 A-
Gate Emitter Leakage Current+/- 200 nA+/- 200 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity450450-
SubcategoryIGBTsIGBTs-
Part # AliasesRGTH40TS65DRGTH40TS65-
Unit Weight1.340411 oz1.340411 oz-
Hersteller Teil # Beschreibung RFQ
RGTH40TS65DGC11 IGBT Transistors 650V 20A IGBT Stop Trench
RGTH40TS65GC11 IGBT Transistors 650V 20A IGBT Stop Trench
RGTH40TS65DGC11 IGBT Transistors 650V 20A Field Stop Trench IGBT
RGTH40TS65GC11 IGBT Transistors 650V 20A Field Stop Trench IGBT
RGTH40TS65 Neu und Original
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