RN1105M

RN1105MFV(TPL3) vs RN1105MFV(TL3,T) vs RN1105MFV

 
PartNumberRN1105MFV(TPL3)RN1105MFV(TL3,T)RN1105MFV
DescriptionBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 2.2K x 47KohmsBipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
ManufacturerToshiba-Toshiba
Product CategoryBipolar Transistors - Pre-Biased-Transistors (BJT) - Single, Pre-Biased
RoHSN--
ConfigurationSingle-Single
Transistor PolarityNPN-NPN
Typical Input Resistor2.2 kOhms-2.2 kOhms
Typical Resistor Ratio0.047-0.047
Mounting StyleSMD/SMT-SMD/SMT
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA-100 mA
Peak DC Collector Current100 mA-100 mA
Pd Power Dissipation150 mW--
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesRN1105--
PackagingReel-Reel
DC Current Gain hFE Max80--
BrandToshiba--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity8000--
SubcategoryTransistors--
Pd Power Dissipation--150 mW
Collector Emitter Voltage VCEO Max--50 V
DC Collector Base Gain hfe Min--80
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
RN1105MFV,L3F Bipolar Transistors - Pre-Biased VESM PLN TRANSISTOR Pd 150mW F 1MHz
RN1105MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 2.2K x 47Kohms
RN1105MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 2.2K x 47Kohms
RN1105MFV,L3F Bipolar Transistors - Pre-Biased VESM PLN TRANSISTOR Pd 150mW F 1MHz
RN1105MFV(TL3,T) Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1105MFV,L3FCT-ND Neu und Original
RN1105MFV,L3FDKR-ND Neu und Original
RN1105MFV,L3FTR-ND Neu und Original
RN1105MFV Neu und Original
RN1105MFV,L3F(T Neu und Original
RN1105MFV,L3SOYF(T Neu und Original
RN1105MFVL3F Trans GP BJT NPN 50V 0.1A 3-Pin VESM Embossed T/R - Tape and Reel (Alt: RN1105MFV,L3F)
RN1105MFVL3F(T Neu und Original
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