PartNumber | RN1105MFV(TPL3) | RN1105MFV(TL3,T) | RN1105MFV |
Description | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 2.2K x 47Kohms | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | |
Manufacturer | Toshiba | - | Toshiba |
Product Category | Bipolar Transistors - Pre-Biased | - | Transistors (BJT) - Single, Pre-Biased |
RoHS | N | - | - |
Configuration | Single | - | Single |
Transistor Polarity | NPN | - | NPN |
Typical Input Resistor | 2.2 kOhms | - | 2.2 kOhms |
Typical Resistor Ratio | 0.047 | - | 0.047 |
Mounting Style | SMD/SMT | - | SMD/SMT |
DC Collector/Base Gain hfe Min | 80 | - | - |
Collector Emitter Voltage VCEO Max | 50 V | - | - |
Continuous Collector Current | 100 mA | - | 100 mA |
Peak DC Collector Current | 100 mA | - | 100 mA |
Pd Power Dissipation | 150 mW | - | - |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Series | RN1105 | - | - |
Packaging | Reel | - | Reel |
DC Current Gain hFE Max | 80 | - | - |
Brand | Toshiba | - | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
Factory Pack Quantity | 8000 | - | - |
Subcategory | Transistors | - | - |
Pd Power Dissipation | - | - | 150 mW |
Collector Emitter Voltage VCEO Max | - | - | 50 V |
DC Collector Base Gain hfe Min | - | - | 80 |