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| PartNumber | RN1105MFV,L3F | RN1105MFV(TPL3) |
| Description | Bipolar Transistors - Pre-Biased VESM PLN TRANSISTOR Pd 150mW F 1MHz | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 2.2K x 47Kohms |
| Manufacturer | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | N |
| Configuration | Single | Single |
| Transistor Polarity | NPN | NPN |
| Typical Input Resistor | 2.2 kOhms | 2.2 kOhms |
| Typical Resistor Ratio | 0.0468 | 0.047 |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-723-3 | - |
| DC Collector/Base Gain hfe Min | 80 | 80 |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V |
| Continuous Collector Current | 100 mA | 100 mA |
| Peak DC Collector Current | 100 mA | 100 mA |
| Pd Power Dissipation | 150 mW | 150 mW |
| Series | RN1105 | RN1105 |
| Packaging | Reel | Reel |
| Collector Base Voltage VCBO | 50 V | - |
| Emitter Base Voltage VEBO | 5 V | - |
| Height | 0.5 mm | - |
| Length | 1.2 mm | - |
| Type | NPN Epitaxial Silicon Transistor | - |
| Width | 0.8 mm | - |
| Brand | Toshiba | Toshiba |
| Maximum DC Collector Current | 100 mA | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 8000 | 8000 |
| Subcategory | Transistors | Transistors |
| Maximum Operating Temperature | - | + 150 C |
| DC Current Gain hFE Max | - | 80 |