 |  | | |
| PartNumber | RN1111MFV,L3F | RN1111MFV(TPL3) | RN1111MFV |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10Kohms | |
| Manufacturer | Toshiba | Toshiba | TOSHIBA |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased |
| RoHS | Y | N | - |
| Configuration | Single | Single | - |
| Transistor Polarity | NPN | NPN | - |
| Typical Input Resistor | 10 kOhms | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-723-3 | VESM-3 | - |
| DC Collector/Base Gain hfe Min | 120 | 700 | - |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | - |
| Continuous Collector Current | 100 mA | 100 mA | - |
| Pd Power Dissipation | 150 mW | 150 mW | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | RN1111MFV | RN1111MFV | - |
| Packaging | Reel | Reel | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Brand | Toshiba | Toshiba | - |
| Number of Channels | 1 Channel | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 8000 | 8000 | - |
| Subcategory | Transistors | Transistors | - |
| Collector Base Voltage VCBO | - | 50 V | - |
| DC Current Gain hFE Max | - | 120 @ 1mA @ 5V | - |
| Height | - | 0.5 mm | - |
| Length | - | 1.2 mm | - |
| Width | - | 0.8 mm | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
RN1111MFV,L3F | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | |
| RN1111MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10Kohms | ||
| RN1111MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10Kohms | ||
| RN1111MFVL3F-ND | Neu und Original | ||
| RN1111MFV | Neu und Original |