 |  | | |
| PartNumber | RN1112MFV(TL3,T) | RN1112MFV(TPL3) | RN1112MFV |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 22kohm | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22Kohms | |
| Manufacturer | Toshiba | Toshiba | TOSHIBA |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased |
| RoHS | Y | N | - |
| Series | RN1112MFV | RN1112MFV | - |
| Packaging | Reel | Reel | - |
| Brand | Toshiba | Toshiba | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 8000 | 8000 | - |
| Subcategory | Transistors | Transistors | - |
| Configuration | - | Single | - |
| Transistor Polarity | - | NPN | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | VESM-3 | - |
| DC Collector/Base Gain hfe Min | - | 700 | - |
| Collector Emitter Voltage VCEO Max | - | 50 V | - |
| Continuous Collector Current | - | 100 mA | - |
| Pd Power Dissipation | - | 150 mW | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Collector Base Voltage VCBO | - | 50 V | - |
| DC Current Gain hFE Max | - | 120 @ 1mA @ 5V | - |
| Emitter Base Voltage VEBO | - | 5 V | - |
| Height | - | 0.5 mm | - |
| Length | - | 1.2 mm | - |
| Width | - | 0.8 mm | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
RN1112MFV(TL3,T) | Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 22kohm | |
| RN1112MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22Kohms | ||
| RN1112MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22Kohms | ||
| RN1112MFVL3F | Neu und Original | ||
| RN1112MFV | Neu und Original |