PartNumber | RN1115,LF(CT | RN1115MFV(TL3,T) | RN1115MFV(TPL3) |
Description | Bipolar Transistors - Pre-Biased Bias Resistor with Built-in Transistor | Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 2.2kohm | Bipolar Transistors - Pre-Biased 2.2Kohms x 10Kohms |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | Y | Y |
Configuration | Single | - | - |
Transistor Polarity | NPN | - | NPN |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SC-75-3 | - | - |
DC Collector/Base Gain hfe Min | 50 | - | 50 |
Collector Emitter Voltage VCEO Max | 50 V | - | 50 V |
Pd Power Dissipation | 100 mW | - | 150 mW |
Minimum Operating Temperature | - 55 C | - | - 65 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Series | RN1115 | RN1115MFV | RN1115MFV |
Packaging | Reel | Reel | Reel |
Collector Base Voltage VCBO | 50 V | - | 50 V |
Emitter Base Voltage VEBO | 6 V | - | 6 V |
Brand | Toshiba | Toshiba | Toshiba |
Maximum DC Collector Current | 100 mA | - | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 3000 | 8000 | 8000 |
Subcategory | Transistors | Transistors | Transistors |
Typical Input Resistor | - | - | 2.2 kOhms |
Typical Resistor Ratio | - | - | 0.22 |
Continuous Collector Current | - | - | 100 mA |
Height | - | - | 1.2 mm |
Length | - | - | 1.2 mm |
Operating Temperature Range | - | - | - 65 C to + 150 C |
Type | - | - | NPN Epitaxial Silicon Transistor |
Width | - | - | 0.5 mm |