 |  | | |
| PartNumber | RN1116MFV(TPL3) | RN1116MFV(TL3,T) | RN1116MFV |
| Description | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 4.7Kohms x 10Kohms | Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 4.7kohm | |
| Manufacturer | Toshiba | Toshiba | TOSHIBA |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased |
| RoHS | Y | Y | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 4.7 kOhms | - | - |
| Typical Resistor Ratio | 0.47 | - | - |
| Mounting Style | SMD/SMT | - | - |
| DC Collector/Base Gain hfe Min | 50 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | RN1116MFV | RN1116MFV | - |
| Packaging | Reel | Reel | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 7 V | - | - |
| Height | 1.2 mm | - | - |
| Length | 1.2 mm | - | - |
| Operating Temperature Range | - 65 C to + 150 C | - | - |
| Type | NPN Epitaxial Silicon Transistor | - | - |
| Width | 0.5 mm | - | - |
| Brand | Toshiba | Toshiba | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 8000 | 8000 | - |
| Subcategory | Transistors | Transistors | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
RN1116MFV(TPL3) | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 4.7Kohms x 10Kohms | |
| RN1116MFV,L3F | Bipolar Transistors - Pre-Biased Bias Resistor NPN .1A 50V 4.7kohm | ||
| RN1116MFV(TL3,T) | Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 4.7kohm | ||
| RN1116MFV(TPL3) | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 4.7Kohms x 10Kohms | ||
| RN1116MFV | Neu und Original | ||
| RN1116MFVL3F | Neu und Original | ||
| RN1116MFVL3F-ND | Neu und Original |