RN1117

RN1117MFV vs RN1117MFV(TL3,T) vs RN1117(T5L,F,T)

 
PartNumberRN1117MFVRN1117MFV(TL3,T)RN1117(T5L,F,T)
DescriptionBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 10kohmBipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
ManufacturerToshibaToshibaToshiba
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased
RoHSYYY
SeriesRN1117MFVRN1117MFVRN1117
BrandToshibaToshibaToshiba
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity300080003000
SubcategoryTransistorsTransistorsTransistors
Packaging-ReelReel
Configuration--Single
Transistor Polarity--NPN
Typical Input Resistor--10 kOhms
Typical Resistor Ratio--2.13
Mounting Style--SMD/SMT
Package / Case--SOT-416-3
DC Collector/Base Gain hfe Min--30
Collector Emitter Voltage VCEO Max--50 V
Continuous Collector Current--100 mA
Pd Power Dissipation--100 mW
Emitter Base Voltage VEBO--15 V
Maximum DC Collector Current--100 mA
Unit Weight--0.000212 oz
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
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RN1117(T5L,F,T) Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
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RN1117(T5L,F,T) Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
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