PartNumber | RN1117MFV | RN1117MFV(TL3,T) | RN1117(T5L,F,T) |
Description | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 10kohm | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | Y | Y |
Series | RN1117MFV | RN1117MFV | RN1117 |
Brand | Toshiba | Toshiba | Toshiba |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 3000 | 8000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Packaging | - | Reel | Reel |
Configuration | - | - | Single |
Transistor Polarity | - | - | NPN |
Typical Input Resistor | - | - | 10 kOhms |
Typical Resistor Ratio | - | - | 2.13 |
Mounting Style | - | - | SMD/SMT |
Package / Case | - | - | SOT-416-3 |
DC Collector/Base Gain hfe Min | - | - | 30 |
Collector Emitter Voltage VCEO Max | - | - | 50 V |
Continuous Collector Current | - | - | 100 mA |
Pd Power Dissipation | - | - | 100 mW |
Emitter Base Voltage VEBO | - | - | 15 V |
Maximum DC Collector Current | - | - | 100 mA |
Unit Weight | - | - | 0.000212 oz |