PartNumber | RN1118(T5L,F,T) | RN1118MFV(TL3,T) | RN1118MFV(TPL3) |
Description | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 47kohm | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 47Kohms x 10Kohms |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | Y | N |
Configuration | Single | - | - |
Transistor Polarity | NPN | - | NPN |
Typical Input Resistor | 47 kOhms | - | 47 kOhms |
Typical Resistor Ratio | 4.7 | - | 4.7 |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SOT-416-3 | - | - |
DC Collector/Base Gain hfe Min | 50 | - | 50 |
Collector Emitter Voltage VCEO Max | 50 V | - | 50 V |
Continuous Collector Current | 100 mA | - | 100 mA |
Pd Power Dissipation | 100 mW | - | 150 mW |
Series | RN1118 | RN1118MFV | RN1118MFV |
Packaging | Reel | Reel | Reel |
Emitter Base Voltage VEBO | 25 V | - | 25 V |
Brand | Toshiba | Toshiba | Toshiba |
Maximum DC Collector Current | 100 mA | - | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 3000 | 8000 | 8000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.000212 oz | - | - |
Minimum Operating Temperature | - | - | - 65 C |
Maximum Operating Temperature | - | - | + 150 C |
Collector Base Voltage VCBO | - | - | 50 V |
Height | - | - | 1.2 mm |
Length | - | - | 1.2 mm |
Operating Temperature Range | - | - | - 65 C to + 150 C |
Type | - | - | NPN Epitaxial Silicon Transistor |
Width | - | - | 0.5 mm |