RN1132M

RN1132MFV(TPL3) vs RN1132MFV(TL3,T) vs RN1132MFV

 
PartNumberRN1132MFV(TPL3)RN1132MFV(TL3,T)RN1132MFV
DescriptionBipolar Transistors - Pre-Biased 50volts 100mA 3Pin 200Kohms x 0ohmsBipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 200kohm
ManufacturerToshibaToshiba-
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased-
RoHSYY-
ConfigurationSingle--
Transistor PolarityNPN--
Typical Input Resistor200 kOhms--
Mounting StyleSMD/SMT--
Package / CaseSOT-723--
DC Collector/Base Gain hfe Min120--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation150 mW--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesRN1132MFVRN1132MFV-
PackagingReelReel-
Collector Base Voltage VCBO50 V--
DC Current Gain hFE Max700--
Emitter Base Voltage VEBO5 V--
Height0.5 mm--
Length1.2 mm--
Operating Temperature Range- 65 C to + 150 C--
TypeNPN Epitaxial Silicon Transistor--
Width0.8 mm--
BrandToshibaToshiba-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity80008000-
SubcategoryTransistorsTransistors-
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
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RN1132MFV(TL3,T) Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 200kohm
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