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| PartNumber | RN1302TE85LF | RN1302T5LND | RN1302TE85L |
| Description | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10K x 10Kohms | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| RoHS | Y | - | - |
| Configuration | Single | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 10 kOhms | - | - |
| Typical Resistor Ratio | 1 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | VESM-3 | - | - |
| DC Collector/Base Gain hfe Min | 50 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | RN1302 | - | - |
| Packaging | Reel | - | - |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Width | 1.25 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
RN1302TE85LF | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10K x 10Kohms | |
| RN1302TE85LF | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 10K x 10Kohms | ||
| RN1302T5LND | Neu und Original | ||
| RN1302TE85L | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | ||
| RN1302TE85R | Neu und Original |