RN1310

RN1310(TE85L,F) vs RN1310 vs RN1310(TE85LF)

 
PartNumberRN1310(TE85L,F)RN1310RN1310(TE85LF)
DescriptionBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7Kohms
ManufacturerToshiba--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Typical Input Resistor4.7 kOhms--
Mounting StyleSMD/SMT--
Package / CaseUSM-3--
DC Collector/Base Gain hfe Min120--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation100 mW--
Maximum Operating Temperature+ 150 C--
SeriesRN1310--
PackagingReel--
DC Current Gain hFE Max700--
Height0.9 mm--
Length2 mm--
Width1.25 mm--
BrandToshiba--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
RN1310(TE85L,F) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7Kohms
RN1310(TE85L,F) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7Kohms
RN1310(TE85LF)CT-ND Neu und Original
RN1310(TE85LF)DKR-ND Neu und Original
RN1310(TE85LF)TR-ND Neu und Original
RN1310 Neu und Original
RN1310(TE85LF) Neu und Original
RN1310(XK) SOT323-XK Neu und Original
RN1310/XK Neu und Original
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