RN1314(T

RN1314(TE85L,F) vs RN1314(TE85LF)CT-ND vs RN1314(TE85LF)DKR-ND

 
PartNumberRN1314(TE85L,F)RN1314(TE85LF)CT-NDRN1314(TE85LF)DKR-ND
DescriptionBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 1.0K x 10Kohms
ManufacturerToshiba--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Typical Input Resistor1 kOhms--
Typical Resistor Ratio0.1--
Mounting StyleSMD/SMT--
Package / CaseSC-70--
DC Collector/Base Gain hfe Min50--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation100 mW--
Maximum Operating Temperature+ 150 C--
SeriesRN1314--
PackagingReel--
DC Current Gain hFE Max50--
Height0.9 mm--
Length2 mm--
Width1.25 mm--
BrandToshiba--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000988 oz--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
RN1314(TE85L,F) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 1.0K x 10Kohms
RN1314(TE85L,F) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 1.0K x 10Kohms
RN1314(TE85LF)CT-ND Neu und Original
RN1314(TE85LF)DKR-ND Neu und Original
RN1314(TE85LF)TR-ND Neu und Original
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