RN1316(T

RN1316(TE85L,F) vs RN1316(TE85L F) vs RN1316(TE85L)

 
PartNumberRN1316(TE85L,F)RN1316(TE85L F)RN1316(TE85L)
DescriptionBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 10Kohms
ManufacturerToshiba--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Typical Input Resistor4.7 kOhms--
Typical Resistor Ratio0.47--
Mounting StyleSMD/SMT--
Package / CaseSC-70--
DC Collector/Base Gain hfe Min50--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation100 mW--
Maximum Operating Temperature+ 150 C--
SeriesRN1316--
PackagingReel--
DC Current Gain hFE Max50--
Height0.9 mm--
Length2 mm--
Width1.25 mm--
BrandToshiba--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000988 oz--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
RN1316(TE85L,F) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 10Kohms
RN1316(TE85L,F) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 10Kohms
RN1316(TE85L F) Neu und Original
RN1316(TE85L) Neu und Original
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