RN1603

RN1603(TE85L,F) vs RN1603 vs RN1603(TE85L)

 
PartNumberRN1603(TE85L,F)RN1603RN1603(TE85L)
DescriptionBipolar Transistors - Pre-Biased Gen Trans NPN x 2 SM6, 50V, 100A
ManufacturerToshibaTOSHIBA-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
RoHSY--
ConfigurationDual--
Transistor PolarityNPN--
Typical Input Resistor22 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSM-6--
DC Collector/Base Gain hfe Min70--
Maximum Operating Frequency250 MHz--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation300 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesRN1603--
PackagingReel--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO10 V--
Operating Temperature Range- 55 C to + 150 C--
BrandToshiba--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
RN1603(TE85L,F) Bipolar Transistors - Pre-Biased Gen Trans NPN x 2 SM6, 50V, 100A
RN1603(TE85L,F) Bipolar Transistors - Pre-Biased Gen Trans NPN x 2 SM6, 50V, 100A
RN1603 Neu und Original
RN1603(TE85L) Neu und Original
Top