PartNumber | RN1902T5LFT | RN1902T5LFTCT-ND | RN1902T5LFTDKR-ND |
Description | Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V | ||
Manufacturer | Toshiba Semiconductor and Storage | - | - |
Product Category | Transistors (BJT) - Arrays, Pre-Biased | - | - |
Series | - | - | - |
Packaging | Digi-ReelR Alternate Packaging | - | - |
Unit Weight | 0.000212 oz | - | - |
Mounting Style | SMD/SMT | - | - |
Package Case | 6-TSSOP, SC-88, SOT-363 | - | - |
Mounting Type | Surface Mount | - | - |
Supplier Device Package | US6 | - | - |
Configuration | Dual | - | - |
Power Max | 200mW | - | - |
Transistor Type | 2 NPN - Pre-Biased (Dual) | - | - |
Current Collector Ic Max | 100mA | - | - |
Voltage Collector Emitter Breakdown Max | 50V | - | - |
Resistor Base R1 Ohms | 10k | - | - |
Resistor Emitter Base R2 Ohms | 10k | - | - |
DC Current Gain hFE Min Ic Vce | 50 @ 10mA, 5V | - | - |
Vce Saturation Max Ib Ic | 300mV @ 250μA, 5mA | - | - |
Current Collector Cutoff Max | 100nA (ICBO) | - | - |
Frequency Transition | 250MHz | - | - |
Pd Power Dissipation | 200 mW | - | - |
Collector Emitter Voltage VCEO Max | 50 V | - | - |
Transistor Polarity | NPN | - | - |
Emitter Base Voltage VEBO | 10 V | - | - |
Maximum DC Collector Current | 100 mA | - | - |
Continuous Collector Current | 100 mA | - | - |
DC Collector Base Gain hfe Min | 50 | - | - |
Typical Input Resistor | 10 kOhms | - | - |
Typical Resistor Ratio | 1 | - | - |