 |  | | |
| PartNumber | RN1961(TE85L,F) | RN1961(TE85LF)CT-ND | RN1961 |
| Description | Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 50mW F 1MHz | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| Configuration | Dual | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 4.7 kOhms | - | - |
| Typical Resistor Ratio | 1 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | US-6 | - | - |
| DC Collector/Base Gain hfe Min | 30 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Reel | - | - |
| Emitter Base Voltage VEBO | 10 V | - | - |
| Brand | Toshiba | - | - |
| Channel Mode | Enhancement | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
RN1961(TE85L,F) | Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 50mW F 1MHz | |
| RN1961FE(TE85L,F) | Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V | ||
| RN1961FS(TPL3) | Bipolar Transistors - Pre-Biased 50mA 20volts 6Pin 4.7K x 4.7Kohms | ||
| RN1961FE(TE85L,F) | Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V | ||
| RN1961(TE85LF)CT-ND | Neu und Original | ||
| RN1961(TE85LF)DKR-ND | Neu und Original | ||
| RN1961(TE85LF)TR-ND | Neu und Original | ||
| RN1961FE(TE85LF)CT-ND | Neu und Original | ||
| RN1961FE(TE85LF)DKR-ND | Neu und Original | ||
| RN1961FE(TE85LF)TR-ND | Neu und Original | ||
| RN1961 | Neu und Original | ||
| RN1961FE | Neu und Original |