 |  | | |
| PartNumber | RN1962FE(TE85L,F) | RN1962FE | RN1962FE(TE85L) |
| Description | Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| RoHS | Y | - | - |
| Configuration | Dual | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 10 kOhms | - | - |
| Typical Resistor Ratio | 1 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-563 | - | - |
| DC Collector/Base Gain hfe Min | 50 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Series | RN1962 | - | - |
| Packaging | Reel | - | - |
| Emitter Base Voltage VEBO | 10 V | - | - |
| Brand | Toshiba | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000106 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
RN1962FE(TE85L,F) | Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V | |
| RN1962FE(TE85L,F) | Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V | ||
| RN1962FE(TE85LF)CT-ND | Neu und Original | ||
| RN1962FE(TE85LF)DKR-ND | Neu und Original | ||
| RN1962FE(TE85LF)TR-ND | Neu und Original | ||
| RN1962FE | Neu und Original | ||
| RN1962FE(TE85L) | Neu und Original | ||
| RN1962FETE85LF | Neu und Original |